View 2SK2937_361404.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

2SK2937
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-560C (Z) 4th. Edition June 1, 1998 Features
* Low on-resistance R DS =0.026 typ. * High speed switching * 4V gate drive device can be driven from 5V source
Outline
TO-220FM
D
G
12 S
1. Gate 2. Drain 3. Source
3
2SK2937
Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP
Note3 Note3 Note2 Note1
Ratings 60 20 25 100 25 20 34 25 150 -55 to +150
Unit V V A A A A mJ W C C
EAR
Pch Tch
Tstg
1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50
2
2SK2937
Electrical Characteristics (Ta = 25C)
Item Symbol Min 60 20 -- -- 1.5 -- -- 11 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.026 0.045 17 740 380 140 10 160 100 150 0.95 40 Max -- -- 10 10 2.5 0.034 0.070 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns I F = 25A, VGS = 0 I F = 25A, VGS = 0 diF/ dt =50A/s Test Conditions I D = 10mA, VGS = 0 I G = 100A, VDS = 0 VGS = 16V, VDS = 0 VDS = 60 V, VGS = 0 I D = 1mA, VDS = 10V I D = 15A, VGS = 10VNote4 I D = 15A, VGS = 4V Note4 I D = 15A, VDS = 10V Note4 VDS = 10V VGS = 0 f = 1MHz I D = 15A, VGS = 10V RL = 2 Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 4. Pulse test I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr
3
2SK2937
Main Characteristics
Power vs. Temperature Derating 40
Pch (W) I D (A)
Maximum Safe Operation Area 200 100
10
10
1
PW
D C O
30
50 20 10 5 2 1 0.5
=
pe
0
s
s
Channel Dissipation
Drain Current
m
s
20
10
tio n
ra
m
(T
s (1 sh
= 25 c
10
Operation in this area is limited by R DS(on)
0
50
100
150 Tc (C)
200
Case Temperature
Ta = 25 C 0.2 0.1 0.3 1 3 10 30 100 Drain to Source Voltage V DS (V)
50
Typical Output Characteristics 10 V 6V 5V
(A)
Typical Transfer Characteristics 20 V DS = 10 V Pulse Test
ot
C
)
)
I D (A)
40
Pulse Test 4.5 V 4V
16
30
ID Drain Current
12
Drain Current
20 3.5 V 10 VGS = 3 V
8 Tc = 75C
25C -25C
4
0
2 4 6 Drain to Source Voltage
8 10 V DS (V)
0
1 2 3 Gate to Source Voltage
4 5 V GS (V)
4
2SK2937
Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 0.8 Static Drain to Source on State Resistance vs. Drain Current
Drain to Source On State Resistance R DS(on) ( )
1.0
0.5
Drain to Source Saturation Voltage V DS(on) (V)
Pulse Test
0.2
0.6 I D = 15 A 10 A 0.2 5A
0.1
0.4
0.05
VGS = 4 V 10 V
0.02 0.01
0
12 4 8 Gate to Source Voltage
16 V GS (V)
20
0.1 0.2
5 10 20 0.5 1 2 Drain Current I D (A)
50
Static Drain to Source on State Resistance R DS(on) ( )
Pulse Test 0.08 10 A
Forward Transfer Admittance |y fs | (S)
Static Drain to Source on State Resistance vs. Temperature 0.10
50 20 10 5 2 1 0.5 0.1
Forward Transfer Admittance vs. Drain Current
Tc = -25 C
0.06 V GS = 4 V 0.04
25 C 75 C
2, 5 A
2, 5, 10 A 0.02 10 V 0 -40 0 40 80 Case Temperature Tc 120 (C) 160
V DS = 10 V Pulse Test 0.3 1 3 10 30 Drain Current I D (A) 100
5
2SK2937
Body-Drain Diode Reverse Recovery Time 1000
Reverse Recovery Time trr (ns)
Typical Capacitance vs. Drain to Source Voltage 5000
Capacitance C (pF)
500
di / dt = 50 A / s V GS = 0, Ta = 25 C
2000 1000 500 200 100 50 20 10 VGS = 0 f = 1 MHz 0 10 20 30 40 50 Crss Coss Ciss
200 100 50
20 10 0.1
0.3 1 3 10 30 100 Reverse Drain Current I DR (A)
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
V DS (V)
Switching Characteristics
V GS (V)
100
I D = 25 A
20
1000 300 t d(off) 100 30 10 3 1 0.1 tf tr
Drain to Source Voltage
60
V DS
12 V GS
Gate to Source Voltage
V DD = 50 V 25 V 10 V
Switching Time t (ns)
80
16
40
8
t d(on)
20
V DD = 50 V 25 V 10 V 8 16 24 32 Gate Charge Qg (nc)
4 0 40
V GS = 10 V, V DD = 3 0 V PW = 5 s, duty < 1 % 0.3 1 3 10 30 Drain Current I D (A) 100
0
6
2SK2937
Reverse Drain Current vs. Source to Drain Voltage 20
Reverse Drain Current I DR (A) Repetitive Avalanche Energy EAR (mJ)
Maximum Avalanche Energy vs. Channel Temperature Derating 40 I AP = 20 A V DD = 25 V duty < 0.1 % Rg > 50
16 10 V 5V
Pulse Test
32
12
24
8
V GS = 0, -5 V
16
4
8 0 25
0
0.4
0.8
1.2
1.6 V SD (V)
2.0
Source to Drain Voltage
50 75 100 125 150 Channel Temperature Tch (C)
Avalanche Test Circuit EAR =
Avalanche Waveform 1 2 * L * I AP * 2 VDSS VDSS - V DD
V DS Monitor
L I AP Monitor
V (BR)DSS I AP VDD ID V DS
Rg Vin 15 V
D. U. T
50 0 VDD
7
2SK2937
Normalized Transient Thermal Impedance vs. Pulse Width 3
Normalized Transient Thermal Impedance s (t)
Tc = 25C 1 D=1 0.5 0.3
0.2
0.1
0.1
0.05
0.02 1 0.0
ch - c(t) = s (t) * ch - c ch - c = 5.0C/W, Tc = 25C
PDM
D=
PW T
0.03
PW T
0.01 10
1s
h
p ot
uls
e
100
1m
10 m 100 m Pulse Width PW (S)
1
10
Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 V DD = 30 V Vout 10% 10% Vout Monitor
Waveform
90%
10% 90% td(off) tf
90% td(on) tr
8
2SK2937
Package Dimensions (Unit: mm)
10.0 0.3 7.0 0.3 3.2 0.2
2.8 0.2 2.5 0.2
2.0 0.3 5.0 0.3
2.7
0.7 0.1
2.54 0.5
2.54 0.5
0.5 0.1 Hitachi Code TO-220FM SC-67 EIAJ -- JEDEC
14.0 1.0
1.2 0.2 1.4 0.2
12.0 0.3
4.45 0.3
17.0 0.3
0.6
9
2SK2937
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi Semiconductor (America) Inc. 2000 Sierra Point Parkway Brisbane, CA. 94005-1897 USA Tel: 800-285-1601 Fax:303-297-0447 Hitachi Europe GmbH Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30-00 Hitachi Asia (Hong Kong) Ltd. Hitachi Asia Pte. Ltd. Hitachi Europe Ltd. 16 Collyer Quay #20-00 Unit 706, North Tower, Electronic Components Div. World Finance Centre, Northern Europe Headquarters Hitachi Tower Harbour City, Canton Road Singapore 049318 Whitebrook Park Tsim Sha Tsui, Kowloon Tel: 535-2100 Lower Cookham Road Hong Kong Fax: 535-1533 Maidenhead Tel: 27359218 Berkshire SL6 8YA Fax: 27306071 United Kingdom Tel: 01628-585000 Fax: 01628-585160 Copyright (c) Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
10

▲Up To Search▲

Price & Availability of 2SK2937

	To Download 2SK2937 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .